Low voltage RF MEMS variable capacitor with linear C-V response

被引:11
|
作者
Elshurafa, A. M. [1 ]
Ho, P. H. [1 ]
Salama, K. N. [1 ]
机构
[1] King Abdullah Univ Sci & Technol, Elect Engn Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia
关键词
D O I
10.1049/el.2011.3340
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An RF MEMS variable capacitor, fabricated in the PolyMUMPS process and tuned electrostatically, possessing a linear capacitance-voltage response is reported. The measured quality factor of the device was 17 at 1 GHz, while the tuning range was 1.2:1 and was achieved at an actuation DC voltage of 8 V only. Further, the linear regression coefficient was 0.98. The variable capacitor was created such that it has both vertical and horizontal capacitances present. As the top suspended plate moves towards the bottom fixed plate, the vertical capacitance increases whereas the horizontal capacitance decreases simultaneously such that the sum of the two capacitances yields a linear capacitance-voltage relation.
引用
收藏
页码:392 / U129
页数:2
相关论文
共 50 条
  • [1] Voltage-Controlled C-V Response Tuning in a Parallel Plate MEMS Variable Capacitor
    Han, Chang-Hoon
    Choi, Dong-Hoon
    Yang, Hyun-Ho
    Yoon, Yong-Hoon
    Yoon, Jun-Bo
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2013, 22 (06) : 1403 - 1413
  • [2] RF MEMS voltage control capacitor
    Zhu, Jian
    Lin, Liqiang
    Lin, Jinting
    Guti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics, 2002, 22 (02): : 146 - 148
  • [3] Novel highly tunable mems capacitors with flexible structure and linear C-V response
    Shavezipur, Mohammad
    Hashemi, Seyed Mohammad
    Khajepour, Amir
    19TH INTERNATIONAL CONFERENCE ON DESIGN THEORY AND METHODOLOGY/1ST INTERNATIONAL CONFERENCE ON MICRO AND NANO SYSTEMS, VOL 3, PART A AND B, 2008, : 949 - 955
  • [4] Sandwich structure type RF-MEMS variable capacitor with low voltage controllability and wide mining range
    Nishimoto, Takuma
    Yamashita, Kiichi
    Ohhata, Kenichi
    IEICE TRANSACTIONS ON COMMUNICATIONS, 2008, E91B (02) : 572 - 574
  • [5] Surface micromachined RF MEMS variable capacitor
    Fang, Dong-Ming
    Fu, Shi
    Cao, Ying
    Zhou, Yong
    Zhao, Xiao-Lin
    MICROELECTRONICS JOURNAL, 2007, 38 (8-9) : 855 - 859
  • [6] Comparison of C-V measurement methods for RF-MEMS capacitive switches
    Wang, Jiahui
    Salm, Cora
    Schmitz, Jurriaan
    2013 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2013, : 53 - 58
  • [7] Quasi-static C-V measurements on RF MEMS test structures
    Lorenzelli, L
    Collini, C
    Margesin, B
    Rangra, KJ
    SENSORS AND MICROSYSTEMS, PROCEEDINGS, 2004, : 443 - 448
  • [8] MOS capacitor C-V Curves
    Feng, Lu
    Chen, Jihua
    2005 International Symposium on Computer Science and Technology, Proceedings, 2005, : 506 - 513
  • [9] The Use of Finite Element Modeling for Calculating the C-V Curve of Capacitor Mems Microphone
    Grigor’ev D.M.
    Godovitsyn I.V.
    Amelichev V.V.
    Generalov S.S.
    Polomoshnov S.A.
    Russian Microelectronics, 2017, 46 (6) : 396 - 403
  • [10] Efficient electrostatic-mechanical modeling of C-V curves of RF-MEMS switches
    Bielen, Jeroen
    Stulemeijer, Jiri
    EUROSIME 2007: THERMAL, MECHANICAL AND MULTI-PHYSICS SIMULATION AND EXPERIMENTS IN MICRO-ELECTRONICS AND MICRO-SYSTEMS, PROCEEDINGS, 2007, : 59 - +