Automatic resist parameter calibration procedure for lithography simulation

被引：5

作者：

Tollkuehn, B ^{[1
]}

Hoepfl, M ^{[1
]}

Erdmann, A ^{[1
]}

Majoni, S ^{[1
]}

Jess, M ^{[1
]}

机构：

[1] Fraunhofer Inst Integrated Circuits, Device Technol Div IIS B, D-91058 Erlangen, Germany

来源：

LITHOGRAPHY FOR SEMICONDUCTOR MANUFACTURING II | 2001年 / 4404卷

关键词：

lithography simulation; parameter tuning; resist modeling;

D O I：

10.1117/12.425221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The simulation of photolithographic processes depends on accurate resist modeling parameters. ha this paper we present an automated fitting procedure which can be applied to arbitrary combinations of experimental data and model parameters. The procedure is applied to a typical i-line process. The resulting models are evaluated with respect to their performance for the fall set of experimental data. The correlation of model parameters with certain experimental data is discussed and an optimum automatic parameter extraction procedure for i-line resists is proposed. Finally, we evaluate the extracted parameters by comparing different simulated profiles with cross-section SEM pictures.

引用

页码：313 / 324

页数：12

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