The physical failure analysis (PFA) of IDDQ and IDDQ_delta fail in 90mn logic products

被引：0

作者：

Liou, SC ^{[1
]}

Chuang, JH ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, Adv Failure Anal Serv Dept, Hsinchu 300, Taiwan

来源：

IPFA 2005: PROCEEDINGS OF THE 12TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As part of a manufacturing test, I-DDQ method has played an indispensable role within the entire fault detection process and I-DDQ_delta test has been identified as one of the possible ways to extend the usability Of IDDQ. For the physical failure analysis (PFA) Of I-DDQ/I-DDQ_(delta) failure parts, emission microscope (EMMI) is widely used for defect site localization. And then the positive voltage contrast (PVC) and the IN curves measurement for individual contacts by C-AFM were performed to identify the precise defect location and real leakage path. The different types of defect were observed: crystal defect induced P+/NW contact leakage and poly-silicon (poly-Si) filled into shallow trench isolation (STI) voids induced leakage are the major defects in this work.

引用

页码：47 / 51

页数：5