Bandgap engineering of sol-gel synthesized amorphous Zn1-xMgxO films

被引：39
|
作者：
Wei, M. [1 ]
Boutwell, R. C. [1 ]
Mares, J. W. [1 ]
Scheurer, A. [1 ]
Schoenfeld, W. V. [1 ]
机构：
[1] Univ Cent Florida, Coll Opt & Photon, CREOL, Orlando, FL 32816 USA
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 26期
基金：
美国国家科学基金会;
关键词：
ALLOY THIN-FILMS; OPTICAL-PROPERTIES; DEPOSITION METHOD; MGXZN1-XO; OXIDE; EDGE;
D O I：
10.1063/1.3604782
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Amorphous Zn1-xMgxO (alpha-Zn1-xMgxO) ternary alloy thin films across the full compositional range were synthesized by a low-cost sol-gel method on quartz substrates. The amorphous property of the alpha-Zn1-xMgxO films was verified by x-ray diffraction, and atomic force microscopy revealed a smooth surface with sub-nanometer root-mean square roughness. The current phase segregation issue limiting application of crystalline Zn1-xMgxO with 38% < x < 75% was completely eliminated by growing amorphous films. Optical transmission measurements showed high transmissivity of more than 90% in the visible and near infrared regions, with optical bandgap tunability from 3.3 eV to more than 6.5 eV by varying the Mg content. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3604782]
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页数：3
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