Effect of two types of surface sites on the characteristics of Si3N4-gate pH-ISFETs

被引：68

作者：

Niu, MN ^{[1
]}

Ding, XF ^{[1
]}

Tong, QY ^{[1
]}

机构：

[1] SOUTHEAST UNIV,CTR MICROELECT,NANJING 210096,PEOPLES R CHINA

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1996年 / 37卷 / 1-2期

关键词：

pH-ISFETs; Si3N4; films; site-binding model; ratio of silanol to amine sites; sensing characteristics;

D O I：

10.1016/S0925-4005(97)80067-6

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Based on the site-binding model, the effects of two types of surface sites (namely, silanol sites and amine sites) and their ratio on the characteristics of an Si3N4-gate pH-ISFET are discussed. As the ratio beta of silanol sites to amine sites is about 7/3, the maximum of sensitivity of the electrolyte-insulator (E-I) interfacial potential versus the pH value, as well as of the range of linear response are theoretically obtained. The stability of pH-ISFET devices is partially determined by the total number of the two types of surface sites and their ratio. The theoretical results are shown to be supported by experimental results.

引用

页码：13 / 17

页数：5

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