Highly tunable gas sensing performance of graphene-metal contact by gate

被引:5
|
作者
Bu, Xiangrui [1 ]
Ma, Fa [1 ]
Wu, Haiyang [1 ]
Wu, Qiang [1 ]
Han, Chuanyu [1 ]
Wang, Xiaoli [1 ]
Li, Xin [1 ]
Liu, Weihua [1 ]
机构
[1] Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Peoples R China
基金
中国国家自然科学基金;
关键词
Graphene; Gas sensors; Contact resistance; Field effect transistor; COMPOSITES; EPOXY;
D O I
10.1016/j.matlet.2020.128132
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A highly electrically tunable gas sensing performance of graphene-metal contact resistance is reported here. The response of graphene-nickel contact resistance (R-C) is improved from 16% to 87% by switching the back-gate voltage (V-BG) from 0 to 30 V during an ammonia gas sensing test. More importantly, the transfer characteristics of R-C display a highly nonlinear performance when the channel is bias close to its charge neutron point. As a result, diverse of gas sensing behavior is observed at various V-BG, 30, 40 and 50 V for instance. The results of this work indicate that the gas sensing performance of graphene-metal contact can be significantly improved via applying a proper back-gate voltage. A highly tunable gas sensing behavior may enrich the device design strategy especially towards gas sensor arrays. (C) 2020 Elsevier B.V. All rights reserved.
引用
收藏
页数:4
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