Electrical observation of impurity levels in boron doped homoepitaxial diamond

被引：0

作者：

Inushima, T ^{[1
]}

Mamin, RF ^{[1
]}

Matsushita, T ^{[1
]}

Ohoya, S ^{[1
]}

Shiomi, H ^{[1
]}

机构：

[1] Tokai Univ, Dept Commun, Hiratsuka, Kanagawa 2591292, Japan

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Boron-doped p-type diamond has at least three activation energies. The first one is 0.30 similar to0.35 eV, which is the energy from the ground states of boron to the valence band. The second one is 0.05 similar to0.07 eV, which is the energy from the impurity band to the valence band which becomes observable when the impurity concentration increases. The third one is 0.003 eV or less, which is the energy of the variable range hopping.

引用

页码：160 / 161

页数：2

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