IrMn spin-valves for high density recording

被引:37
|
作者
Childress, JR
Carey, MJ
Wilson, RJ
Smith, N
Tsang, C
Ho, MK
Carey, K
MacDonald, SA
Ingall, LM
Gurney, BA
机构
[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
[2] IBM Corp, Storage Technol Div, San Jose, CA 95120 USA
关键词
exchange bias; GMR sensors; IrMn spin-valves; magnetic recording; magnetoresistance;
D O I
10.1109/20.950956
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Simple IrMn spin-valves are investigated for use in high density recording head sensors. Top-IrMn spin-valves of the form NiFeCr(40 Angstrom)/NiFe(32 Angstrom)/CoFe(5)/Cu(25 Angstrom)/ CoFe(30 Angstrom)/IrMn(80 Angstrom)/Ta(50 I) were deposited by magnetron sputtering. By tailoring the pinned layer composition at the CoFe/IrMn interface to Co60Fe40, the exchange bias can be increased above 400 Oe with a GMR amplitude of about 12%. Recording heads were fabricated with total gap thicknesses down to 900 Angstrom, magnetic trackwidth down to 0.2 mum and stripe height down to 0.3 mum. The transfer curve characteristics are found to agree reasonably well with micromagnetic modeling. The model is then used to predict head sensitivity loss from the combination of insufficient exchange bias and short sensor stripe heights.
引用
收藏
页码:1745 / 1748
页数:4
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