Solution Processable Low-Voltage Organic Thin Film Transistors with High-k Relaxor Ferroelectric Polymer as Gate Insulator

被引：220
|
作者：
Li, Jinhua [1 ,2 ]
Sun, Zhenhua [1 ,2 ]
Yan, Feng [1 ,2 ]
机构：
[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China
来源：
ADVANCED MATERIALS | 2012年 / 24卷 / 01期
关键词：
organic thin film transistors; high-k gate dielectrics; relaxor ferroelectric polymers; ELECTROCHEMICAL TRANSISTORS; CHARGE-TRANSPORT; MOBILITY; DIELECTRICS; PHYSICS;
D O I：
10.1002/adma.201103542
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A relaxor ferroelectric polymer poly( vinylidene fl uoride-trifl uoroethylenechlorofl oroethylene) exhibits a high relative dielectric constant (k) (similar to 60). The high-k polymer is used successfully in solution processable low-voltage organic thin fi lm transistors (OTFTS) as the gate insulator for the fi rst time. Both n-channel and p-channel OTFTs based on conjugated polymers are fabricated and show carrier mobilities higher than 0.1 cm2 V-1 s(-1) at an operating voltage of 3 V.
引用
收藏
页码：88 / +
页数：7
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