Ultra-high mobility in defect-free poly(3-hexylthiophene-2,5-diyl) field-effect transistors through supra-molecular alignment

被引:27
|
作者
Nawaz, Ali [1 ]
Kumar, Anil [2 ]
Hummelgen, Ivo A. [1 ]
机构
[1] Univ Fed Parana, Dept Fis, Caixa Postal 19044, BR-81531980 Curitiba, Parana, Brazil
[2] Indian Inst Technol, Bombay, Powai, India
关键词
Poly(3-hexylthiophene-2,5-diyl); Defect-free; Floating film transfer; Molecular alignment; Field-effect transistors; THIN-FILM TRANSISTORS; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); CHARGE-TRANSPORT; CONJUGATED POLYMERS; ORGANIC TRANSISTORS; PERFORMANCE; ENHANCEMENT; ORIENTATION; SURFACE; MORPHOLOGY;
D O I
10.1016/j.orgel.2017.08.032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Performance enhancement of organic field-effect transistors (OFETs) based on solution-processable conjugated polymers (CPs) holds critical significance for the realization of cost-effective commercial applications such as organic light-emitting diode displays. One of the most critical performance parameters is the charge-carrier field-effect mobility (mu(FET)) that is significantly influenced by the molecular arrangement in a CP. In this article, floating film transfer method (FTM) is utilized for the deposition of a CP-defect-free poly(3-hexylthiophene-2,5-diyl) (DF-P3HT)-which results in the formation of aligned supra-molecular assemblies. When applied as the active layer in OFET devices, mu(FET) reaching as high as 8.0 cm(2)/V.s (6.3 cm(2)/V.s on average) is obtained. The value of mu(FET) observed in the current study is the highest value reported so far for P3HT based OFETs (similar to 5 times higher as compared to when DF-P3HT is deposited using spin coating). (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:94 / 102
页数:9
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