Optical bistability in active semiconductor microring structures

被引：8

作者：

Alexandropoulos, Dimitris ^{[1
]}

Simos, Hercules ^{[1
]}

Adams, Michael J. ^{[2
]}

Syvridis, Dimitris ^{[1
]}

机构：

[1] Univ Athens, Dept Informat & Telecommun, Opt Commun Lab, GR-15784 Athens, Greece

[2] Univ Essex, Comp & Elect Syst Dept, Colchester CO4 3SQ, Essex, England

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2008年 / 14卷 / 03期

关键词：

active microrings; logic gates; optical bistability (OB); optical switching;

D O I：

10.1109/JSTQE.2008.921424

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The spectral and power (I/O) bistable characteristics of active microring (MR) structures are analyzed theoretically. The theoretical formulation is based on the rate equation under the assumption of the z-independent optical power accounting for amplified spontaneous emission. The analysis is performed for MRs in both all-pass and add-drop configurations. The effect of cavity characteristics on the bistable performance are explored. Based on these the merits of the resonant nonlinearity enhancement are discussed and strategies for optimized bistable loops are outlined.

引用

页码：918 / 926

页数：9

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