Study of the absorption edge of SnO2 nanoparticles embedded in silica films

被引：7
|
作者：
Lorenzi, R. [1 ]
Lauria, A. [1 ]
Mochenova, N. [1 ]
Chiodini, N. [1 ]
Paleari, A. [1 ]
机构：
[1] Univ Milano Bicocca, Dept Mat Sci, I-20125 Milan, Italy
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2011年 / 357卷 / 8-9期
关键词：
Absorption edge; Wide band gap semiconductor; Nanostructures; Silica film; Sol-gel; NANOCRYSTALS;
D O I：
10.1016/j.jnoncrysol.2010.12.045
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Silica thin films with embedded SnO2 nanoparticles have been grown on transparent substrates by the sol-gel method. Tin dioxide crystals with cassiterite structure are semiconductors with a wide band gap of similar to 3.6 eV. Optical absorption spectroscopy in the near ultraviolet-visible range has been exploited to probe nanostructuring features of such nanocrystals. The results show that the sintering conditions modify crystallite mean size and enable the occurrence of quantum confinement effects. The outcome is in accordance with transmission electron microscopy data conducted on analogous bulk samples. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1888 / 1891
页数：4
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