Combination of high-resolution RBS and angle-resolved XPS: accurate depth profiling of chemical states

被引：18

作者：

Kimura, Kenji ^{[1
]}

Nakajima, Kaoru ^{[1
]}

Zhao, Ming ^{[1
]}

Nohira, Hiroshi ^{[5
]}

Hattori, Takeo

Kobata, Masaaki ^{[4
]}

Ikenaga, Eiji ^{[4
]}

Kim, Jung An ^{[4
]}

Kobayashi, Keisuke ^{[3
,4
]}

Conard, Thierry ^{[2
]}

Vandervorst, Wilfried ^{[2
]}

机构：

[1] Kyoto Univ, Dept Micro Engn, Kyoto 6068501, Japan

[2] IMEC, B-3001 Louvain, Belgium

[3] NIMS Spring 8, Mikazuki, Hyogo 6795198, Japan

[4] JASRI Spring 8, Mikazuki, Hyogo 6795198, Japan

[5] Musashi Inst Technol, Dept Elect & Elect Engn, Tokyo 1588557, Japan

来源：

SURFACE AND INTERFACE ANALYSIS | 2008年 / 40卷 / 3-4期

关键词：

high-resolution RBS; angle-resolved XPS; depth profiling; combination analysis;

D O I：

10.1002/sia.2628

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A new method for the combination analysis of high-resolution Rutherford backscattering spectroscopy (HRBS) and angle-resolved X-ray photoelectron spectroscopy (AR-XPS) is proposed for accurate depth profiling of chemical states. In this method, attenuation lengths [ALs) for the photoelectrons are first determined so that the AR-XPS result is consistent with the HRBS result. Depth profiling of the chemical states are then performed in the AR-XPS analysis using the composition-depth profiles obtained by HRBS as constrained conditions. This method is successfully applied to Hf-based gate stack structures demonstrating its feasibility. Copyright (C) 2008 John Wiley & Sons, Ltd.

引用

页码：423 / 426

页数：4

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