Voltage-reduced low-defect graphene oxide: a high conductivity, near-zero temperature coefficient of resistance material

被引：15
|
作者：
Silverstein, Kevin W. [1 ]
Halbig, Christian E. [2 ]
Mehta, Jeremy S. [1 ]
Sharma, Anju [3 ]
Eigler, Siegfried [2 ]
Mativetsky, Jeffrey M. [1 ]
机构：
[1] SUNY Binghamton, Dept Phys Appl Phys & Astron, Binghamton, NY 13902 USA
[2] Free Univ Berlin, Inst Chem & Biochem, Takustr 3, D-14195 Berlin, Germany
[3] SUNY Binghamton, Small Scale Syst Integrat & Packaging Ctr, Binghamton, NY 13902 USA
来源：
NANOSCALE | 2019年 / 11卷 / 07期
基金：
美国国家科学基金会;
关键词：
RAMAN-SPECTROSCOPY; REDUCTION; SENSORS; CHEMISTRY; CELL;
D O I：
10.1039/c8nr08285e
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A highly conductive graphene derivative was produced by using a low-defect form of graphene oxide, oxo-G, in conjunction with voltage-reduction, a simple and environmentally-benign procedure for removing oxygen-containing functional groups. A low temperature coefficient of resistance was achieved, making this material promising for temperature-stable electronics and sensors.
引用
收藏
页码：3112 / 3116
页数：5
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