Microscopic Observation of Low Efficiency in Green Light-Emitting Diodes

被引:15
|
作者
Leem, Young-Chul [1 ,2 ]
Yim, Sang-Youp [1 ]
机构
[1] Gwangju Inst Sci & Technol, Adv Photon Res Inst, Gwangju 61005, South Korea
[2] Univ Penn, Dept Mat Sci & Engn, 3231 Walnut St, Philadelphia, PA 19104 USA
来源
ACS PHOTONICS | 2018年 / 5卷 / 03期
基金
新加坡国家研究基金会;
关键词
light-emitting diodes; optical materials; green gap; adaptive optics; imaging and sensing; photonic devices; microscopic analysis; CARRIER LOCALIZATION; BLUE; RECOMBINATION; LUMINESCENCE; LAYER;
D O I
10.1021/acsphotonics.7b01504
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The low efficiency of green light-emitting diodes (LEDs), a phenomenon known as the green gap, is a key obstacle hindering the application of LEDs as next-generation light sources to pioneer a plethora of new applications in the optical, medical, and communication sectors. Based on a microscopic photoluminescence analysis of green GaN-based multiple quantum wells, we find that In-enriched emission clusters on the submicrometer scale, previously thought to be efficient luminescent centers, do not emit light effectively. Such emission clusters can localize an excessively large amount of carriers, leading to the subsequent occurrence of vigorous nonradiative recombination processes. We also observe that the effective volume of the LED active region is significantly reduced, possibly because the generation of these In-enriched clusters via metastable phase separation significantly degrades the surrounding crystal quality. The microscopic analysis of luminescent clusters gives insight into the low efficiency of green LEDs, which may guide future directions for the development of LEDs.
引用
收藏
页码:1129 / 1136
页数:15
相关论文
共 50 条
  • [1] Improving radiative recombination efficiency of green light-emitting diodes
    Ding, Boning
    MATERIALS SCIENCE AND TECHNOLOGY, 2018, 34 (14) : 1615 - 1630
  • [2] Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes
    Capelli, Raffaella
    Toffanin, Stefano
    Generali, Gianluca
    Usta, Hakan
    Facchetti, Antonio
    Muccini, Michele
    NATURE MATERIALS, 2010, 9 (06) : 496 - 503
  • [3] Green phosphorescent dendrimer for light-emitting diodes
    Lo, SC
    Male, NAH
    Markham, JPJ
    Magennis, SW
    Burn, PL
    Salata, OV
    Samuel, IDW
    ADVANCED MATERIALS, 2002, 14 (13-14) : 975 - +
  • [4] Frontiers in Green Perovskite Light-Emitting Diodes
    Yu, Runnan
    Li, Changxiao
    Zhao, Biao
    Tan, Zhan'ao
    LASER & PHOTONICS REVIEWS, 2024, 18 (04)
  • [5] Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the "green gap"
    Zhao, Chunyu
    Tang, Chak Wah
    Lai, Billy
    Cheng, Guanghui
    Wang, Jiannong
    Lau, Kei May
    PHOTONICS RESEARCH, 2020, 8 (05) : 750 - 754
  • [6] Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”
    CHUNYU ZHAO
    CHAK WAH TANG
    BILLY LAI
    GUANGHUI CHENG
    JIANNONG WANG
    KEI MAY LAU
    Photonics Research, 2020, 8 (05) : 750 - 754
  • [7] Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”
    CHUNYU ZHAO
    CHAK WAH TANG
    BILLY LAI
    GUANGHUI CHENG
    JIANNONG WANG
    KEI MAY LAU
    Photonics Research, 2020, (05) : 750 - 754
  • [8] Ultrahigh efficiency green polymer light-emitting diodes by nanoscale interface modification
    Xu, QF
    Ouyang, JY
    Yang, Y
    Ito, T
    Kido, J
    APPLIED PHYSICS LETTERS, 2003, 83 (23) : 4695 - 4697
  • [9] Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment
    Lin, Hung-Cheng
    Lin, Ruo-Syuan
    Chyi, Jen-Inn
    APPLIED PHYSICS LETTERS, 2008, 92 (16)
  • [10] Improved Quantum Efficiency in Green InGaN Light-Emitting Diodes With InGaN Barriers
    Chang, Jih-Yuan
    Chang, Yi-An
    Chen, Fang-Ming
    Kuo, Yih-Ting
    Kuo, Yen-Kuang
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (01) : 55 - 58