Influence of free carrier concentration on absorption and third-order susceptibilities of n-type ZnSe crystals

被引:14
|
作者
Sahraoui, B [1 ]
Chevalier, R [1 ]
Phu, XN [1 ]
Rivoire, G [1 ]
Bala, W [1 ]
机构
[1] NICHOLAS COPERNICUS UNIV,INST PHYS,PL-87100 TORUN,POLAND
关键词
D O I
10.1063/1.363527
中图分类号
O59 [应用物理学];
学科分类号
摘要
This study analyzes the dependence of third-order susceptibilities at 532 nm of n-type ZnSe crystals in relation to free carrier concentration and annealing temperatures, The nonlinear optical absorption and the efficiency of degenerate four-wave mixing of ZnSe are investigated, We find that the magnitude of the nonlinear absorption decreases with the electron concentration and annealing temperature increase, while the nonlinear refractive index increases slightly. (C) 1996 American Institute of Physics.
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页码:4854 / 4858
页数:5
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