Extending the inelastic thermal spike model for semiconductors and insulators

被引：44

作者：

Daraszewicz, S. L.

Duffy, D. M. ^{[1
]}

机构：

[1] UCL, Dept Phys & Astron, London WC1E 6BT, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2011年 / 269卷 / 14期

关键词：

Swift heavy ions; Silicon; Inelastic thermal spike; Radiation damage; SWIFT HEAVY-IONS; HIGH ELECTRONIC EXCITATIONS; CROSS-SECTION; PURE METALS; IRRADIATION; DAMAGE; TRACKS; SENSITIVITY; SIMULATION; EMISSION;

D O I：

10.1016/j.nimb.2010.11.031

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The inelastic thermal spike framework was extended to incorporate an additional balance equation for the carrier density. Temporal and spatial evolution of carrier density, electronic and lattice temperatures were solved for silicon using a finite difference method. Calculated track radii for a range of electronic stopping powers are presented. The model allows us to fit the electron-phonon coupling to experimental data of amorphised track radii. We compare the methodology of this framework to an earlier inelastic thermal spike model, which is based on the two-temperature model for non-equilibrium processes in metals, and discuss its contribution to the understanding of microscopic processes following a swift ion irradiation event in band gap materials. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1646 / 1649

页数：4

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