HIGH-DENSITY AND WELL-ORDERED SI-NANODISK ARRAY WITH CONTROLLABLE BAND GAP ENERGY AND HIGH PHOTON ABSORPTION COEFFICIENT FOR ALL-SILICON TANDEM SOLAR CELL APPLICATIONS

被引：0

作者：

Huang, Chi-Hsien ^{[1
,4
]}

Igarashi, Makoto ^{[1
,4
]}

bin Budiman, Mohd Fairuz ^{[1
]}

Wang, Xuan-Yu ^{[1
,4
]}

Oshima, Ryuji ^{[2
,4
]}

Yamashita, Ichiro ^{[3
,4
]}

Okada, Yoshitaka ^{[2
,4
]}

Samukawa, Seiji ^{[1
,4
]}

机构：

[1] Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi, Japan

[2] Univ Tokyo, Adv Sci & Technol Res Ctr, Tokyo, Japan

[3] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara, Japan

[4] Japan Sci & Technol Agency JST, CREST, Tokyo, Japan

来源：

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE | 2010年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

AII-Si tandem solar cells comprising quantum dot superlattice (ODSL) have attracted much attention. However, a fabrication to realize uniform and controllable QD size (determines band gap (E-g)) and spacing between QDs (generates miniband) in QDSL is still a big challenge. In this study, we created a two-dimensional sub-10nm-Si-nano-disk array (2D Si-ND array) with a high-density and well-ordered arrangement using bio-template (Iron-oxide core) as a phi-7-nm-etching-mask and an advanced etching process that included NF3 treatment and damage-free neutral beam (NB) etching. The 2D Si-ND array shows high photon absorption coefficient (> 10(5) cm(-1)) and high PL intensity at room temperature owing to high-density 2D Si-ND (> 7x10(11) cm(-2)) and narrow spacing. The E-g and PL emission peaks can be easily controlled by changing the ND thickness. The E-g varied from 2.2 to 1.4 eV. To realize tandem solar cells, we also investigated fabricatin stacked NDs, which is to stack the NDs along the 3(rd) dimension. The NDs were separated by 1-2nm-thick SiO2 that was formed by our developed NB oxidation (NBO) at 300 degrees C. The tunneling current can be controlled by changing the tunneling junction thickness using NBO. Those results support the feasibility of our proposed processes for the high-efficiency all-Si tandem solar cells comprising QDSL.

引用

页数：5