Photoelectric Response in Indium-Tin Oxide Films

被引：1
|
作者：
Makhin, Alexey V. [1 ]
Meshkovskiy, Igor K. [2 ]
Plyastsov, Semyon A. [2 ]
机构：
[1] Polytech, St Petersburg 195197, Russia
[2] ITMO Univ, Dept Lightguide Photon, St Petersburg 197101, Russia
来源：
IEEE SENSORS JOURNAL | 2017年 / 17卷 / 18期
关键词：
Indium tin oxide; photoelectric response; anomalous photovoltaic effect; THIN-FILMS; PHOTOVOLTAGES;
D O I：
10.1109/JSEN.2017.2734278
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the mechanism of photoelectric response of indium tin oxide films is discussed. We observed the photoelectric emission in indium tin oxide films and suggested the physical mechanism describing the photoelectric response based on this phenomenon. We showed that the anisotropy of the electric field could be associated with preferred orientation of the grains in deposited films. We discussed the influence of parasitic capacitance on the shape of the photoelectric response. In this paper, we showed that photoelectric effect in indium-tin oxide films could be applied to measure the temporal characteristics of the laser pulse.
引用
收藏
页码：5880 / 5884
页数：5
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