808-nm laser diode bars based on epitaxially stacked double heterostructures

被引：5

作者：

Davydova, E. I. ^{[1
]}

Konyaev, V. P. ^{[1
]}

Ladugin, M. A. ^{[1
]}

Lebedeva, E. I. ^{[1
]}

Marmalyuk, A. A. ^{[1
]}

Padalitsa, A. A. ^{[1
]}

Petrov, S. V. ^{[1
]}

Sapozhnikov, S. M. ^{[1
]}

Simakov, V. A. ^{[1
]}

Uspenskii, M. B. ^{[1
]}

Yarotskaya, I. V. ^{[1
]}

机构：

[1] MF Stelmakh Polyus Res & Dev Inst, Moscow 117342, Russia

来源：

QUANTUM ELECTRONICS | 2010年 / 40卷 / 08期

关键词：

laser diode bars; epitaxially stacked double heterostructures; laser sources; SEMICONDUCTOR-LASERS; ARRAYS;

D O I：

10.1070/QE2010v040n08ABEH014366

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated and investigated line ararrays of single laser diodes (LDs) and epitaxially stacked double LDs based on AlGaAs/GaAs heterostructures emitting in the 808-nm range. The power-current characteristic of the double-LD bars has a slope of 2.18 W A(-1), which is almost twice that of the single-LD bars (1.16 W A(-1)). The voltage drop across the former bars is also larger. At a pump current of 60 A, the output power of 5-mm-long arrays of LDs based on epitaxially stacked double heterostructures is 100 W under quasi-cw pumping, which is a factor of 1.8 above that of the single-LD bars under identical conditions.

引用

页码：682 / 684

页数：3

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