Defect-engineered room-temperature ferromagnetism in quasi-two-dimensional nitrided CoTa2O6

被引：3

作者：

Ma, Yalin ^{[1
]}

Zhao, Shuang ^{[1
]}

Zhou, Xiao ^{[1
]}

Zeng, Yijie ^{[2
,3
]}

Song, Haili ^{[1
]}

Wang, Jing ^{[1
]}

Li, Guangqin ^{[1
]}

Frank, Corey E. ^{[4
]}

Ma, Lu ^{[5
]}

Croft, Mark ^{[6
]}

Wang, Yonggang ^{[7
]}

Greenblatt, Martha ^{[4
]}

Yao, Dao-Xin ^{[2
]}

Li, Man-Rong ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Chem, Minist Educ, Key Lab Bioinorgan & Synthet Chem, Guangzhou 510275, Peoples R China

[2] Sun Yat Sen Univ, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

[3] Hangzhou Dianzi Univ, Coll Sci, Hangzhou 310018, Peoples R China

[4] Rutgers State Univ, Dept Chem & Chem Biol, 123 Bevier Rd, Piscataway, NJ 08854 USA

[5] Brookhaven Natl Lab, Natl Synchrotron Light Source II, Bldg 74,POB 5000, Upton, NY 11973 USA

[6] Rutgers State Univ, Dept Phys & Astron, 136 Frelinghuysen Rd, Piscataway, NJ 08854 USA

[7] Ctr High Pressure Sci & Technol Adv Res HPSTAR, Beijing 100094, Peoples R China

来源：

PHYSICAL REVIEW B | 2021年 / 104卷 / 01期

基金：

美国国家科学基金会;

关键词：

DOUBLE PEROVSKITE; OXIDE; SEMICONDUCTORS; CONDUCTIVITY; OXYNITRIDES; MAGNETISM; CRYSTAL; DENSITY; TA3N5; TAON;

D O I：

10.1103/PhysRevB.104.014421

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermal ammonolysis of quasi-two-dimensional (quasi-2D) CoTa2O6 yields the O2-/N3- and anionic vacancy-ordered Co2+Ta25+O6-xN2x/3 square(x/3) (x <= 0.15), which exhibits a transition from antiferromagnetism to defect-engineered above-room-temperature ferromagnetism. First-principles calculations reveal that the origin of ferromagnetism is a particular CoO5N configuration with N located at Wyckoff position 8 j, which breaks mirror symmetry about the ab plane. A pressure-induced electronic phase transition is also predicted at similar to 24.5 GPa, accompanied by insulator-to-metal transition and magnetic moment vanishing.

引用

页数：9

共 50 条

[1] Magnetic structure of the quasi-two-dimensional compound CoTa2O6
Kinast, E. J.
dos Santos, C. A.
Schmitt, D.
Isnard, O.
Gusmao, M. A.
da Cunha, J. B. M.
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 491 (1-2) : 41 - 44
[2] Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor
Wang X.J.
Buyanova I.A.
Zhao F.
Lagarde D.
Balocchi A.
Marie X.
Tu C.W.
Harmand J.C.
Chen W.M.
Nature Materials, 2009, 8 (3) : 198 - 202
[3] Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor
Wang, X. J.
Buyanova, I. A.
Zhao, F.
Lagarde, D.
Balocchi, A.
Marie, X.
Tu, C. W.
Harmand, J. C.
Chen, W. M.
NATURE MATERIALS, 2009, 8 (03) : 198 - 202
[4] Room-temperature ferromagnetism in two-dimensional Mn2B
Yue, Yunliang
Xie, Weifeng
Ren, Jie
Wang, Min
VACUUM, 2024, 220
[5] Room-temperature phosphorescence of defect-engineered silica nanoparticles for high-contrast afterglow bioimaging
Chang, Heemin
Park, Yoonsang
Kim, Kyunghwan
Han, Chaewon
Yoon, Yeongjun
Yoo, Woojung
Yoo, Jounghyun
Lee, Dajin
Han, Hyunho
Kim, Kyeounghak
Joo, Jinmyoung
Kwon, Woosung
CHEMICAL ENGINEERING JOURNAL, 2024, 493
[6] Room-temperature ferromagnetism in two-dimensional CrBr3
Singh, Chandan K.
Kabir, Mukul
PHYSICAL REVIEW MATERIALS, 2022, 6 (08)
[7] Toward intrinsic room-temperature ferromagnetism in two-dimensional semiconductors
Fanlong Ning
Journal of Semiconductors, 2019, (08) : 5 - 5
[8] Room-Temperature Ferromagnetism in Two-Dimensional Janus Titanium Chalcogenides
Zhang Kai
Wu Xiaojun
ACTA CHIMICA SINICA, 2023, 81 (09) : 1142 - 1147
[9] Toward intrinsic room-temperature ferromagnetism in two-dimensional semiconductors
Ning, Fanlong
JOURNAL OF SEMICONDUCTORS, 2019, 40 (08)
[10] Toward Intrinsic Room-Temperature Ferromagnetism in Two-Dimensional Semiconductors
Huang, Chengxi
Feng, Junsheng
Wu, Fang
Ahmed, Dildar
Huang, Bing
Xiang, Hongjun
Deng, Kaiming
Kan, Erjun
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2018, 140 (36) : 11519 - 11525

← 1 2 3 4 5 →