Native defects in n-type Sn-doped GaAs using positron annihilation technique

被引：0
|
作者：
Saha, AK [1 ]
Gugre, S
Das, D
SenGupta, A
机构：
[1] Visva Bharati Univ, Dept Phys, Santini Ketan 731235, W Bengal, India
[2] IUC DAE Facil, Kolkata Ctr, Kolkata 700098, India
来源：
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS | 2004年 / 445-6卷
关键词：
GaAsSn-doped; positron lifetime; S-parameter; vacancy-dopant complex;
D O I：
10.4028/www.scientific.net/MSF.445-446.174
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Positron lifetime measurements have been carried out in n-type Sn-doped GaAs (n similar to 5 x 10(17) cm(-3)) during isochronal annealing over a temperature range 20-520degreesC. The annealing results have revealed a significant change in positron lifetime parameters beyond 320degreesC indicating a configurational change in the acceptor type vacancy-dopant complex in the material. The long lifetime component 295ps obtained at room temperature has been attributed to this specific acceptor type vacancy-dopant complex.
引用
收藏
页码：174 / 176
页数：3
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