Structural features of Σ=19, [110] GaAs tilt grain boundaries

被引:1
|
作者
Cho, NH [1 ]
Carter, CB
机构
[1] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea
[2] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
关键词
D O I
10.1023/A:1017943105582
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Sigma = 19, [110] tilt grain boundaries have been observed to facet parallel to particular planes; the facets lie along ((3) over bar3 (1) over bar)(A)/(3 (3) over bar3 (1) over bar)(B), ((5)over bar>58>)(A)/7 (7) over bar4>)(B) and ((2) over bar2 (7) over bar)(A)/(4<(4)over bar5>)(B). The structural unit of the Sigma = 19 ((3) over bar3 (1) over bar>)(A)/(3 (3) over bar(1) over bar)(B) [110] boundaries consists of 5- and 7-member rings, which are similar to the core structure of a/2[110] edge dislocations. The polarities in each grain on either side of the boundaries has been confirmed by CBED methods; a lower number of anti-site type cross-boundary bonds occur along the boundaries compared to when the polarity of one grain is reversed. The presence of 7-member rings and anti-site cross-boundary bonds results in a more open atomic structure at the boundary, shortening the distance between the first and the second {331} atomic planes from the boundary plane by 40%. (C) 2001 Kluwer Academic Publishers.
引用
收藏
页码:4511 / 4518
页数:8
相关论文
共 50 条
  • [1] Structural features of Σ = 19, [110] GaAs tilt grain boundaries
    N.-H. Cho
    C. B. Carter
    Journal of Materials Science, 2001, 36 : 4511 - 4518
  • [2] Structural features of ∑ = 3 and 9, [110] GaAs tilt grain boundaries
    Cho, Nam-Hee
    Carter, C.B.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (07): : 4458 - 4465
  • [3] Structural features of Σ=3 and 9, [110] GaAs tilt grain boundaries
    Cho, NH
    Carter, CB
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (07): : 4458 - 4465
  • [4] Structural features of tilt grain boundaries in GaAs thin films
    Cho, NH
    Carter, CB
    METALS AND MATERIALS-KOREA, 2000, 6 (03): : 181 - 187
  • [5] Structural features of tilt grain boundaries in GaAs thin films
    Cho, N.-H.
    Carter, C.B.
    Metals and Materials International, 2000, 6 (03): : 181 - 187
  • [6] Structural features of tilt grain boundaries in GaAs thin films
    N. -H. Cho
    C. B. Carter
    Metals and Materials, 2000, 6 : 181 - 187
  • [7] Structure of [110] tilt grain boundaries in zirconia bicrystals
    Department of Materials Science, School of Engineering, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo
    113-8656, Japan
    不详
    113-8656, Japan
    不详
    113-8656, Japan
    Microsc., 2050, 6 (429-433):
  • [8] Structure and free volume of ⟨110⟩ symmetric tilt grain boundaries with the E structural unit
    Tschopp, M. A.
    Tucker, G. J.
    McDowell, D. L.
    ACTA MATERIALIA, 2007, 55 (11) : 3959 - 3969
  • [9] Quasiperiodic [110] symmetric tilt FCC grain boundaries
    Zou, Wenwen
    Zhang, Juan
    Xu, Jie
    Jiang, Kai
    COMPUTATIONAL MATERIALS SCIENCE, 2025, 253
  • [10] Structure of [110] tilt grain boundaries in zirconia bicrystals
    Shibata, N
    Yamamoto, T
    Ikuhara, Y
    Sakuma, T
    JOURNAL OF ELECTRON MICROSCOPY, 2001, 50 (06): : 429 - 433