A novel high-isolation RF-SOI switch for 2.4 GHz multi-standard applications

被引：5

作者：

Chen, Lei ^{[1
]}

Zhang, Runxi ^{[1
]}

Shi, Chunqi ^{[1
]}

Ruan, Ying ^{[1
]}

Su, Jie ^{[1
]}

Zhang, Shulin ^{[1
]}

Lai, Zongsheng ^{[1
]}

机构：

[1] E China Normal Univ, Inst Microelect Circuit & Syst, Shanghai 200062, Peoples R China

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2011年 / 67卷 / 02期

关键词：

PD-SOI; Switch; Isolation; Multi-standard; TECHNOLOGY;

D O I：

10.1007/s10470-010-9588-z

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Taking advantage of 1 K Omega center dot cm high-resistivity substrate and special device structure, a novel stack-by-two Single-pole-double-throw (SPDT) switch is fabricated in 0.18 mu m partially depleted silicon-on-insulator technology for power handling capability and linearity improvement, targeting 2.4 GHz multi-standard transceiver application. The measured insertion loss is -1.1 dB at 2.4 GHz. With stacked switching device, the circuit exhibits a high measured input input-referred 1 dB power compression point (IP1 dB) of 21.5 dBm, which has more than 7 dB enhancement compared to previous work. The measured isolation is 43 dB. The switch has a overall occupied die area of 1200 x 560 mu m(2).

引用

页码：143 / 148

页数：6

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