Controlling the morphology of ultrathin MoS2/MoO2 nanosheets grown by chemical vapor deposition

被引:3
|
作者
Guo, Zongliang [1 ]
Xiao, Zhiming [1 ]
Wei, Aixiang [1 ]
Zhao, Yu [1 ]
Liu, Jun [1 ]
机构
[1] Guangdong Univ Technol, Sch Mat & Energy, Guangdong Prov Key Lab Funct Soft Condensed Matte, Guangzhou 510006, Guangdong, Peoples R China
来源
关键词
MOS2; TRANSITION; DICHALCOGENIDES; LAYERS;
D O I
10.1116/1.5035346
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The morphology of MoS2 plays an important role in its properties and applications, such as electronics and catalysis. Herein, the morphology of as-grown MoS2/MoO2 freestanding nanosheets and 2D MoS2, as synthesized by chemical vapor deposition using S and MoO3 powders as reactants, was studied by tuning the distances between the MoO3 source and the substrate and between the S and MoO3 powder sources. The distance between the MoO3 source and the substrate was deliberately reduced to obtain a sharp gradient of MoO3 precursor concentration on the growth substrate, and the position of S was changed to obtain various sulfur concentrations and initial reaction temperatures. As a result, morphology evolution, including 2D MoS2 and MoS2/MoO2 freestanding nanosheets was observed. A mechanism was proposed to explain the morphology transformation between horizontal 2D flakes and freestanding nanosheets. Based on this mechanism, synthesis methods to produce dense, ultrathin, large-sized MoS2 freestanding nanosheets were proposed. These results may be further generalized to create novel nanostructured devices. Published by the AVS.
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页数:7
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