High Performance n-MOS finFET by Damage-Free, Conformal Extension Doping

被引：0

作者：

Zschatzsch, G. ^{[1
]}

Sasaki, Y. ^{[1
]}

Hayashi, S. ^{[1
]}

Togo, M. ^{[1
]}

Chiarella, T. ^{[1
]}

Kambham, A. K. ^{[1
]}

Mody, J. ^{[1
]}

Douhard, B. ^{[1
]}

Horiguchi, N. ^{[1
]}

Mizuno, B. ^{[1
]}

Ogura, M. ^{[1
]}

Vandervorst, W. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A solution for conformal n-type finFET extension doping is demonstrated, yielding I-ON values of 1.23 mA/mu m at I-OFF=100 nA/um at 1V. This high device performance results from 40% reduced external resistance, which in term is stemming from 130% increased fin sidewall doping (confirmed by SIMS, SSRM and Atom Probe) relative to ion implant process. In this work we also report lowered gate leakage due to the damage-free extension doping.

引用

页数：4

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