High-density MIM capacitors (∼ 85 nF/cm2) on organic substrates

For the first time, transferring the prefabricated capacitors on a silicon wafer onto FR-4 has been used to realize high-density metal-insulator-metal (MIM) capacitors on an organic substrate. A high capacitance density similar to 85 nF/cm(2) was achieved on FR-4 substrate with PECVD silicon nitride as the dielectric layer. Excellent voltage coefficient (similar to 2.2 ppm/v(2)) and temperature coefficient (similar to 38 ppm/degrees C) were obtained for capacitors on FR-4. Dielectric leakage and breakdown characteristics have been assessed, and the results demonstrated acceptable performance. Thus, this technology provides a new method to embed/integrate high-density capacitors on organic substrates for the system-in-package applications.