Effect of impurity (Te and Zn) incorporation in the density of defect states in thin films of Se90In10 and Se75In25 glassy alloys

In this paper we report the effect of Te and Zn incorporation on the density of defect states of two binary Se-In glassy systems. For this purpose, we have chosen here two well known Se(90)ln(10) and Se75In25 binary glassy alloys. Thin films of se(90)In(10). Se75In25, SemlnioTeis and Se75In10Zn15 glassy alloys prepared by quenching method, were deposited on glass substrate using thermal evaporation technique. Current-voltage characteristics have been measured at various fixed temperatures in the thin films under study. Ohmic behavior was observed at low electric fields while at high electric fields current becomes superohmic. An analysis of the experimental data confirms the presence of space charge limited conduction in Se90In10, Se75In10Te15 and Se75- In10Zn15 glassy alloys. It was found that the absence of space charge limited conduction in Se75In25 may be due to joule's heating at high fields. By applying the theory of space charge limited conduction, the density of defect states near Fermi level was calculated. The peculiar role of the additives (Te and Zn) in the pure binary Se90In10 and Se75In25 glassy alloys is also discussed in terms of electro-negativity difference between the elements involved. (C) 2011 Elsevier B.V. All rights reserved.