Possible Mechanism for Effects Caused by Exposure to Extremely Low Frequency Magnetic Fields

被引:3
|
作者
Gao, Yang [1 ]
Zheng, Yu [1 ]
Chen, Ruijuan [1 ]
Wang, Hui-Quan [1 ]
Dong, Lei [1 ]
Dou, Junrong [1 ]
机构
[1] Tianjin Polytech Univ, Sch Elect & Informat Engn, Tianjin 300387, Peoples R China
关键词
Extremely low frequency magnetic fields (ELF-MFs) exposure; H-H model; ion mobility; phenomenological model; transition probability; two-state channel model; 50; HZ; ELECTROMAGNETIC-FIELDS; ACTION-POTENTIALS; BRAIN SLICES; STIMULATION; MODULATION; CHANNELS; CALCIUM; AMPLITUDE; CURRENTS;
D O I
10.1109/TMAG.2016.2594284
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper introduces a possible mechanism to explain the changes in neurons following extremely low frequency magnetic fields (ELF-MFs). The model in this paper contains two parts: the physical part and the bio-trigger part. The first part is an electric current equation, which is a generalization of the Nernst-Plank equation with the exposure of ELF-MF, and the second bio-part is a phenomenological model, which is a simple two-state channel with two steady state open (O) state and closed state (C). The two parts are complementary. The first part is utilized to explain changes about synaptic plasticity following ELF-MF exposure at embryonic and postnatal age. The second part is used to simulate the process of three different types of neurons reported by previous papers. According to the results, the present model is feasible for the simulation process. The concept of ion mobility or permeability is emphasized in this paper in part I, and channel state transition probabilities are paid much attention to in part II. In this paper, the ion mobility or permeability is supposed to have close relationships with ion channel transition probabilities, which connects the two parts of the model together.
引用
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页数:8
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