Advanced substrate thinning process for GaAs-based devices

被引：8

作者：

Sun, Jason ^{[1
]}

Choi, Kwong-Kit ^{[1
]}

Jhabvala, Merzy D. ^{[2
]}

Jhabvala, Christine ^{[2
]}

机构：

[1] USA, Res Lab, Adelphi, MD 20783 USA

[2] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

来源：

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2011年 / 10卷 / 02期

关键词：

inductively coupled plasma selective etching; corrugated quantum well infrared photodetector focal plane arrays; GaAs substrate thinning; ALGAAS; ETCH; PLASMAS; LAYERS; DAMAGE;

D O I：

10.1117/1.3580755

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We developed an optimized substrate removal process for GaAs-based opto-electronic devices by establishing a reliable two-step process. In this process, the substrate is first thinned by mechanical lapping and then followed by selective high density plasma etching. The adopted inductively coupled plasma etching, having an optimized boron trichloride (BCl3)/sulfur hexafluoride (SF6)/argon composition, shows a nearly infinite etching selectivity for the GaAs substrate over the aluminum gallium arsenide (AlxGa1-xAs) etch-stop layer. The surface of the die is perfectly smooth and mirror-like after processing. In addition to its simplicity, the process is also highly reproducible and shows no damage to the underlying detector material. (C) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI:10.1117/1.3580755]

引用

页数：4

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