Molecular dynamics simulation of low-energy sputtering of Pt (111) surface by oblique Ni atom bombardment

被引:0
|
作者
Yan Chao [1 ]
Duan Jun-Hong [1 ]
He Xing-Dao [1 ]
机构
[1] Nanchang Hangkong Univ, Sch Measuring & Opt Engn, Minist Educ, Key Lab Nondestruct Testing, Nanchang 330063, Peoples R China
基金
中国国家自然科学基金;
关键词
molecular dynamics simulation; incident angle; low-energy sputtering; DEPOSITION; PT(111); MECHANISM; CU;
D O I
10.7498/aps.60.088301
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The low-energy sputtering on Pt (111) surface by Ni atom at incident angle in a range of 0 degrees-80 degrees (with respect to the direction normal to the surface) is studied by molecular dynamics simulations. The atomic interaction potential obtained with embedded atom method is used in the simulation. The dependence of sputtering yield, energy and angular distribution of sputtered particles as well as sticking probability of Ni atom on incident angle are discussed. The dependence of sputtering yield on incident angle theta can be divided into three different regions in theta, i.e., theta <= 20 degrees, 20 degrees <= theta <= 60 degrees,and theta >= 60 degrees. Based on sticking probability and movement of incident atom, physical mechanism of low-energy sputtering at oblique particle bombardment is suggested. When the incident angle theta is smaller than 20 degrees, the reflection of incident atom by target atom dominates the sputtering process of surface atom, which is similar to the sputtering mechanism for the case of theta = 0 degrees. While for 20 degrees <= theta <= 60 degrees, the reflection of incident atom is no longer important for the low-energy sputtering. For the case of theta >= 60 degrees, there occurs no sputtering.
引用
收藏
页数:8
相关论文
共 20 条
  • [1] Cu sputtering and deposition by off-normal, near-threshold Cu+ bombardment:: Molecular dynamics simulations
    Abrams, CF
    Graves, DB
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (04) : 2263 - 2267
  • [2] Influence of the sputtering variables in the ion bombardment during off-axis deposition of YBa2Cu3Ox films
    Acosta, M
    Ares, O
    Sosa, V
    Acosta, C
    Peña, JL
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (05): : 2879 - 2884
  • [3] SPUTTERING MECHANISM FOR LOW-ENERGY LIGHT-IONS
    BEHRISCH, R
    MADERLECHNER, G
    SCHERZER, BMU
    ROBINSON, MT
    [J]. APPLIED PHYSICS, 1979, 18 (04): : 391 - 398
  • [4] EMBEDDED-ATOM METHOD - DERIVATION AND APPLICATION TO IMPURITIES, SURFACES, AND OTHER DEFECTS IN METALS
    DAW, MS
    BASKES, MI
    [J]. PHYSICAL REVIEW B, 1984, 29 (12): : 6443 - 6453
  • [5] Sputtering mechanisms near the threshold energy
    Eckstein, W
    Roth, J
    Nagel, W
    Dohmen, R
    [J]. JOURNAL OF NUCLEAR MATERIALS, 2004, 328 (01) : 55 - 61
  • [6] EXPERIMENTAL AND MOLECULAR-DYNAMICS STUDY OF THE AR EMISSION MECHANISM DURING LOW-ENERGY AR + BOMBARDMENT OF CU
    FEIL, H
    VANZWOL, J
    DEZWART, ST
    DIELEMAN, J
    GARRISON, BJ
    [J]. PHYSICAL REVIEW B, 1991, 43 (16): : 13695 - 13698
  • [7] FOILES SM, 1986, PHYS REV B, V33, P7983, DOI 10.1103/PhysRevB.33.7983
  • [8] Molecular dynamics simulations of ion self-sputtering of Ni and Al surfaces
    Hanson, DE
    Stephens, BC
    Saravanan, C
    Kress, JD
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (03): : 820 - 825
  • [9] Erosion of accel grids of ion engine due to sputtering
    Kenmotsu, T.
    Wada, M.
    Hyakutake, T.
    Muramoto, T.
    Nishida, M.
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2010, 81 (02):
  • [10] SPUTTERING OF POLYCRYSTALLINE METAL-SURFACES AT OBLIQUE ION-BOMBARDMENT IN 1 KEV RANGE
    OECHSNER, H
    [J]. ZEITSCHRIFT FUR PHYSIK, 1973, 261 (01): : 37 - 58