Optical properties of InP nanowires on Si substrates with varied synthesis parameters

被引：37
|
作者：
Chuang, Linus C. [1 ,2 ]
Moewe, Michael [1 ,2 ]
Crankshaw, Shanna [1 ,2 ]
Chang-Hasnain, Connie [1 ,2 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Appl Sci & Technol Grp, Berkeley, CA 94720 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2832643
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the effect of synthesis parameters on the physical appearance and optical properties of InP nanowires (NWs) grown on Si substrates by metal-organic chemical vapor deposition. A strong dependence on the group V to III precursor ratio is observed on the NW shape and, consequently, its photoluminescence (PL). Narrow, uniform-diameter NWs are achieved with an optimized V/III ratio. The uniform NWs exhibit PL widths as low as 1.4 meV. Their peak wavelength does not vary much with excitation, which is important for NW lasers on Si. These characteristics are attributed to the one-dimensional density of states in uniform-diameter NWs. (c) 2008 American Institute of Physics.
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页数：3
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