A 0.6 V 10 GHz CMOS VCO Using a Negative-Gm Back-Gate Tuned Technique

被引：17

作者：

Yang, Ching-Yuan ^{[1
,2
]}

Chang, Chih-Hsiang ^{[1
,3
]}

Lin, Jung-Mao ^{[1
,3
]}

Weng, Jun-Hong ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Grad Inst Elect Engn, Taichung 40227, Taiwan

[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan

[3] Ind Technol Res Inst, Informat & Commun Res Labs, Hsinchu, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2011年 / 21卷 / 03期

关键词：

Back-gate MOS; varied p-n junction capacitance; varied transconductance; voltage-controlled oscillator (VCO); BAND; OSCILLATOR;

D O I：

10.1109/LMWC.2010.2102011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Without an extra on-chip accumulation-mode MOS varactor, a voltage-controlled oscillator (VCO) using a negative-transconductance back-gate tuned technique is demonstrated in a standard 0.18 mu m CMOS process to achieve low-voltage, wide-range and high-frequency designs. Employing the varied p-n junction capacitance and the varied transconductance in the intrinsic-tuned regime, the VCO provides the tuning range of 9.95 to 11.05 GHz at a 0.6 V supply and dissipates below 4.35 mW. At 11 GHz carrier frequency, the measured phase noise is -110.4 dBc/Hz at a 1 MHz offset.

引用

页码：163 / 165

页数：3

共 27 条

[1] A 12.5 GHz back-gate tuned CMOS voltage controlled oscillator
Mostafa, AH
El-Gamal, MN
ICECS 2000: 7TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS & SYSTEMS, VOLS I AND II, 2000, : 243 - 247
[2] 11-GHz CMOS differential VCO with back-gate transformer feedback
Oh, NJ
Lee, SG
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2005, 15 (11) : 733 - 735
[3] A 0.55 V Back-Gate Controlled Ring VCO for ADCs in 65 nm SOTB CMOS
Yoshio, Tsunehiro
Kihara, Takao
Yoshimura, Tsutomu
2017 IEEE ASIA PACIFIC MICROWAVE CONFERENCE (APMC), 2017, : 946 - 948
[4] A CMOS Back-Gate Coupling LC Quadrature VCO with Switched Self-Biasing Tail Transistor Technique
Qiuzhen Wan
Yaneng Liu
Qingdi Wang
Circuits, Systems, and Signal Processing, 2015, 34 : 3147 - 3160
[5] A CMOS Back-Gate Coupling LC Quadrature VCO with Switched Self-Biasing Tail Transistor Technique
Wan, Qiuzhen
Liu, Yaneng
Wang, Qingdi
CIRCUITS SYSTEMS AND SIGNAL PROCESSING, 2015, 34 (10) : 3147 - 3160
[6] A 0.6 V, 4.32 mW, 68 GHz low phase-noise VCO with intrinsic-tuned technique in 0.13 μm CMOS
Chen, Hsien-Ku
Chen, Hsien-Jui
Chang, Da-Chiang
Juang, Ying-Zong
Lu, Shey-Shi
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2008, 18 (07) : 467 - 469
[7] A Wide Range 60 GHz VCO Using Back-Gate Controlled Varactor in 22 nm FDSOI Technology
Zhang, Chi
Otto, Michael
2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2017,
[8] A low-power quadrature VCO using current-reused technique and back-gate coupling
Tsai, Yu-Ching
Shen, Yi-Shing
Jou, Christina F.
Piers 2007 Beijing: Progress in Electromagnetics Research Symposium, Pts I and II, Proceedings, 2007, : 139 - 143
[9] 0.8 V 450 μW 2.4 GHz PLL using Back-Gate QVCO for ZigBee/BLE standard in 0.18 μm CMOS
Chary, Purushothama P.
Peerla, Rizwan Shaik
Regulagadda, Sesha Sairam
Naseeb, Mohd Abdul
Acharyya, Amit
Rajalaksmi, P.
Mandal, Debashis
Dutta, Ashudeb
2016 INTERNATIONAL CONFERENCE ON MICROELECTRONICS, COMPUTING AND COMMUNICATIONS (MICROCOM), 2016,
[10] A 2.5-GHz 1-V High Efficiency CMOS Class-E Amplifier IC Using Back-gate Voltage Injection
Kurniawan, Taufiq Alif
Yang, Xin
Sun, Zheng
Xu, Xiao
Yoshimasu, Toshihiko
2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2014, : 744 - 746

← 1 2 3 →