High-sensitivity temperature sensor with calibration against temperature of. real object

This work presents a pyrometer for measurement of temperature of a substrate surface during the MBE growth of semiconductor heterostructures. The pyrometer sensor is based on a high-sensitivity low-noise photodiode sensor representing a microassemblage of a Si p-i-n photodiode with an electronic signal processing scheme using time-pulse modulation. The basic advantage of the proposed pyrometer is its high sensitivity, accuracy (not worse than 1.5 degrees C) and reproducibility within the temperature interval 450-1200 degrees C for the operation speed 0.001-1 s under the condition of changing transmission of a vacuum chamber observation (pyrometric) window by up to 10 times. High accuracy and reproducibility of results has been achieved due to implementing the calibration principle against characteristic temperature points inherent in an object and received in situ on indirect measurements.