The effect of Si co-doping on defect-induced intrinsic magnetism in GaN

被引：0

作者：

Zhang Lei ^{[1
]}

Xing Huai-Zhong ^{[1
]}

Huang Yan ^{[2
]}

Zhang Hui-Yuan ^{[1
]}

Wang Ji-Qing ^{[3
]}

机构：

[1] Donghua Univ, Dept Appl Phys, Shanghai 201620, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[3] E China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2011年 / 30卷 / 03期

关键词：

GaN:Si; the first principle; magnetism; GENERALIZED GRADIENT APPROXIMATION; FERROMAGNETISM; SEMICONDUCTORS; FILMS; ZNO;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Using the first principle method within the local spin density approximation, both the magnetism of defect induced in GaN and the effect of Si co-doping on the magnetism in GaN with defect were investigated. It was found that defect-induced intrinsic magnetic moment of GaN is 3 mu(B), while the magnetic moment is quenched to 2 mu(B) in Si-co-doping GaN:Si. The magnetic moment decreases with the increase of the concentration of Si. The result is very helpful for experiments.

引用

页码：229 / +

页数：4

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