Surface Morphology Evaluation and Material Removal Mechanism Analysis by Single Abrasive Scratching of RB-SiC Ceramics

Reaction-Bonded Silicon Carbide (RB-SiC) ceramics possessing excellent mechanical and chemical properties, whose surface integrities have an essential effect on their performance and service life, have been widely used as substrates in the core parts of aerospace, optics and semiconductors industries. The single abrasive scratching test is considered as the effective way to provide the fundamental material removal mechanisms in the abrasive lapping and polishing of RB-SiC ceramics for the best surface finish. In this study, a novel single abrasive scratching test with an increasing scratching depth has been properly designed to represent the real abrasive lapping and polishing process and employed to experimentally investigate the surface integrity regarding different scratching speeds. Three typical and different material removal stages, including the ductile mode, ductile-brittle transition mode and brittle mode, can be clearly distinguished and it is found that in the ductile material removal stage by increasing the scratching speed would inhibit the plastic deformation and improve its surface integrity. It is also found that in the ductile-brittle transition and brittle material removal stages, to increase the scratching speed would inhibit the plastic deformation due to the fast scratching speed that limits the time of plastic deformation on the target, but it also results in the increased length of lateral cracks with the increased scratching speed which can reflect that the size of brittle chips, like brittle fractures and large grain fragmentations, increases as the scratching speed increases. It can provide the references for the optimization of the abrasive lapping and polishing of RB-SiC ceramics with high efficiency and surface quality.