Phase composition of films in a Bi-S system and formation of Bi2S3 films with different substructures

被引：1
|
作者：
Akhmedov, G. M. [1 ]
机构：
[1] Natl Acad Sci Azerbaijan, Inst Phys, Baku 371143, Azerbaijan
来源：
SEMICONDUCTORS | 2008年 / 42卷 / 02期
关键词：
73.61.Jc; 71.23.Cq;
D O I：
10.1134/S1063782608020012
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Electron diffraction was used to study the formation of phases in a Bi-S system. It is shown that the phase with composition Bi2S3 appears as result of consecutive deposition of Bi and S irrespective of the order of deposition; this phase also appears in the case of simultaneous deposition of components. The films formed at room temperature are amorphous. Amorphous thin Bi2S3 films are stable at room temperature and crystallize at temperatures in the region of similar to 423 K. The conditions for formation of Bi2S3 films with different substructures are established.
引用
收藏
页码：129 / 130
页数：2
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