Gas-phase synthesis of amorphous silicon nitride - reaction paths and powder characteristics

被引:13
|
作者
Ziegenbalg, G
Focke, T
Holldorf, H
Brink, R
Lange, H
机构
[1] TU Bergakad Freiberg, Inst Tech Chem, D-09596 Freiberg, Germany
[2] Bayer AG, AI IPV F, D-47829 Krefeld, Germany
关键词
D O I
10.1023/A:1004548801992
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The gas phase reaction between SiCl4 and NH3 is investigated in the temperature range between 525 and 800 degrees C at atmospheric pressure and at conditions typical for powder synthesis. By means of mass spectrometric in-situ measurements it was possible to detect the gaseous compounds H2NSiCl3, H2NSiCl2NH2, Cl3SiNHSiCl3, NH2Cl2SiNHSiCl3, (SiCl2NH)(3) and Si-3(NH)(3)Cl5NH2 The reactions taken place in the gas phase are very fast and result in the formation of a fine, chlorine containing product. Powders sampled at a reaction temperature of 800 degrees C have an average molar ratio Si:N:CI of 1 :1, 33:0.28. Based on the proved gaseous intermediates and the composition of the powders reaction paths resulting in the formation of powders are derived. alpha-Si3N4 powders with a high sintering activity are obtained after thermal dechlorination of the synthesis products in ammonia atmosphere followed by a crystallization process between 1200 and 1500 degrees C. (C) 1999 Kluwer Academic Publishers.
引用
收藏
页码:2199 / 2206
页数:8
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