Control of thin film structure by reactant pressure in atomic layer deposition of TiO2

被引：73

作者：

Aarik, J

Aidla, A

Sammelselg, V

Siimon, H

Uustare, T

机构：

[1] TARTU STATE UNIV,INST EXPT PHYS & TECHOL,EE-2400 TARTU,ESTONIA

[2] ESTONIAN ACAD SCI,INST PHYS,EE-2400 TARTU,ESTONIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 169卷 / 03期

关键词：

D O I：

10.1016/S0022-0248(96)00423-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Atomic layer growth of TiO2 films from TiCl4 and H2O was examined. It was established that polycrystalline films of pure rutile, pure TiO2-II, or a mixture of them could be obtained at the same growth temperature (400 degrees C) and at the same TiCl4 vapor pressure (0.34 Pa) applying different water vapor pressures during the water pulse. Possible growth mechanisms leading to formation of different structures are discussed.

引用

页码：496 / 502

页数：7

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