Vertical GaN Schottky Diodes Grown on Highly Conductive Ammono-GaN Substrate

被引：2

作者：

Kruszewski, P. ^{[1
,2
]}

Prystawko, P. ^{[1
,2
]}

Grabowski, M. ^{[1
]}

Sochacki, T. ^{[1
]}

Sidor, A. ^{[1
]}

Bockowski, M. ^{[1
,2
]}

Jasinski, J. ^{[3
]}

Lukasiak, L. ^{[3
]}

Kisiel, R. ^{[3
]}

Leszczynski, M. ^{[1
,2
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland

[2] Top GaN Ltd, Sokolowska 29-37, PL-01142 Warsaw, Poland

[3] Warsaw Univ Technol, Inst Microelect & Optoelect, Koszykowa 75, PL-00662 Warsaw, Poland

来源：

ACTA PHYSICA POLONICA A | 2018年 / 134卷 / 04期

关键词：

D O I：

10.12693/APhysPolA.134.969

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on vertical n-GaN high voltage Schottky diodes grown by metal organic chemical vapour deposition and hydride vapour phase epitaxy on conductive ammono-GaN substrate. The thermionic emission current model has been applied for diodes analysis and parameters extraction. Finally, we demonstrate that breakdown voltage as high as 670 V for such structures can be achieved.

引用

页码：969 / 972

页数：4

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