A VGA Indirect Time-of-Flight CMOS Image Sensor With 4-Tap 7-$\mu$ m Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation

被引:40
|
作者
Keel, Min-Sun [1 ]
Jin, Young-Gu [1 ]
Kim, Youngchan [1 ]
Kim, Daeyun [1 ]
Kim, Yeomyung [1 ]
Bae, Myunghan [1 ]
Chung, Bumsik [1 ]
Son, Sooho [1 ]
Kim, Hogyun [1 ]
An, Taemin [1 ]
Choi, Sung-Ho [1 ]
Jung, Taesub [1 ]
Kwon, Yonghun [1 ]
Seo, Sungyoung [1 ]
Kim, Sae-Young [1 ]
Bae, Kwanghyuk [1 ]
Shin, Seung-Chul [1 ]
Ki, Myoungoh [1 ]
Yoo, Seoungjae [1 ]
Moon, Chang-Rok [1 ]
Ryu, Hyunsurk [1 ]
Kim, Joonseok [1 ]
机构
[1] Samsung Elect, Hwaseong 18448, South Korea
关键词
3-D imaging; CMOS image sensor; depth sensor; time-of-flight (ToF); DEMODULATION;
D O I
10.1109/JSSC.2019.2959502
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A video graphics array (VGA) (640 $\times $ 480) indirect time-of-flight (ToF) CMOS image sensor has been designed with 4-tap 7- $\mu \text{m}$ global-shutter pixel in 65-nm back-side illumination (BSI) process. With a 4-tap pixel structure, we achieved motion artifact-free depth map. Peak current during exposure time has been reduced by current spreading with constant delay chain in the photo-gate driver. Column fixed-pattern phase noise (FPPN) from the constant delay chain is self-compensated by the proposed time-interleaving technique with the two inversely directional clock chains in the photo-gate driver. Quantum efficiency (QE) and demodulation contrast (DC) have been optimized by using appropriate optical engineering techniques with an optimal silicon thickness. As a result, QE of 34% at 940-nm near-infrared and high DC of 86% at 100-MHz modulation frequency have been achieved. In addition, motion artifact and column FPPN are successfully removed in the depth map. The proposed ToF sensor shows depth noise less than 0.57% with 940-nm illuminator over the working distance up to 4 m, and consumes only 160 mW for VGA output at 60 frames/s.
引用
收藏
页码:889 / 897
页数:9
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