A 14nm FinFET Analog Baseband SOC for Multi-mode Cellular Applications with Tri-band Carrier Aggregation

被引：0

作者：

Han, Byungki ^{[1
]}

Lee, Jongwoo ^{[1
]}

Oh, Seunghyun ^{[1
]}

Kim, Jaekwon ^{[1
]}

Mamidala, Eswar ^{[1
]}

Cho, Thomas ^{[1
]}

机构：

[1] Samsung Elect, Hwasung, South Korea

来源：

PROCEEDINGS INTERNATIONAL SOC DESIGN CONFERENCE 2017 (ISOCC 2017) | 2017年

关键词：

SAR ADC; TXDAC; Carrier Aggregation;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a power and area efficient ABB solution implemented in 14nm FinFET process for a cellular baseband SOC which supports tri-band RX CA and dual-band TX CA. 12bit RXADCs are implemented using ADC reference sharing capacitor with sampling rate up to 150MS/s for a single-LO contiguous intra-band CA. An oversampling SAR architecture provides reconfigurable mode and effective blocker sensing up to Nyquist bandwidth. 12bit TXDACs support up to 250MS/s speed with more than 80dB SFDR. A common-mode calibration technique is proposed to provide effective matching between TXDAC and RF transmitter.

引用

页码：1 / 2

页数：2

共 18 条

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