Global temperature field simulation of the vapour pressure controlled Czochralski (VCZ) growth of 3"-4" gallium arsenide crystals

The vapour pressure controlled Czochralski (VCZ) method belongs to the new methods to provide low-gradient temperature fields during the growth of III-V crystals. For the first time a global two-dimensional model of the VCZ growth of 3" and 4" GaAs crystals is presented. The finite volume code CrysVUN ++ was used to simulate heat transfer taking into account conduction and radiation in the whole equipment. Thermoelastic stresses are analysed in terms of the von-Mises stress. There is a good agreement between measured and calculated values, e.g., of the convexity of the crystal-melt interface. (C) 1999 Elsevier Science B.V. All rights reserved.