The study of CD error in mid-local pattern area caused by develop loading effect - art. no. 67300H

被引：1

作者：

Kang, Man-Kyu ^{[1
]}

Lee, Jung-Hun ^{[1
]}

Kim, Seong-Yoon ^{[1
]}

Kim, Byung-Gook ^{[1
]}

Woo, Sang-Gyun ^{[1
]}

Cho, Han-Ku ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Hwasung City 445701, Gyeonggi Do, South Korea

来源：

PHOTOMASK TECHNOLOGY 2007, PTS 1-3 | 2007年 / 6730卷

关键词：

develop loading; CD uniformity; dissolution product; chemical flare;

D O I：

10.1117/12.746565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As the design rule has decreased in semiconductor manufacturing, the ITRS roadmap requires significantly tighter critical dimension control. Especially, CD error caused by develop loading become significant in the overall error budget and has approached to over 5nm. It is very difficult to control dissolution product making the change of dissolution rate by chemical flow direction in develop process. These days, the study of develop loading within global area has significantly progressed. However, we will focus on CD error in mid-local area by using a detailed analysis. And we evaluate these phenomenon caused by pattern density difference, called chemical flare. Even though using several developer types, CD error appears at the chip to chip boundary. It is impossible to correct CD error in this area by electron beam correction. Therefore, this paper analyzed about CD error in a value of several tens similar to hundreds nm. In view of develop loading, we will optimize develop process for improvement of CD error.

引用

页码：H7300 / H7300

页数：10