The effect of static applied magnetic and electric fields on the dielectronic recombination of MgII

被引:8
|
作者
LaGattuta, K
Borca, B
机构
[1] Los Alamos Natl Lab, Los Alamos, NM 87544 USA
[2] Univ Nebraska, UNL, Lincoln, NE 68588 USA
关键词
D O I
10.1088/0953-4075/31/21/010
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A new calculation was performed of the dielectronic recombination rate coefficient alpha(DR) for the Mg-II ion, in cases for which static magnetic and electric fields are applied simultaneously in the collision region. The intermediate-state Hamiltonian was diagonalized in a basis of states of fixed n (principal quantum number of the high Rydberg state electron) and included the paramagnetic, diamagnetic and Stark terms. Our results showed enhancements of alpha(DR), when both magnetic and electric fields were present, beyond what occurred for an applied electric field alone. Generally. these additional enhancements depended nontrivially upon the angle between the two applied fields. Also, in a region of elevated magnetic field strengths B-0 greater than or equal to 1 kG, the diamagnetic term was found to play an important role, when n greater than or equal to 40.
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页码:4781 / 4789
页数:9
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