The structure of the InP(001)-(4x2) surface studied by scanning tunneling microscopy

被引：27
|
作者：
Shimomura, M
Sanada, N
Fukuda, Y
Moller, PJ
机构：
[1] SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SHIZUOKA 432,JAPAN
[2] UNIV COPENHAGEN,DEPT CHEM,DK-2100 COPENHAGEN,DENMARK
来源：
SURFACE SCIENCE | 1996年 / 359卷 / 1-3期
关键词：
indium phosphide; low index single crystal surfaces; scanning tunneling microscopy; semiconductor surfaces; surface relaxation and reconstruction;
D O I：
10.1016/0039-6028(96)00700-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The structure of an InP(001)-(4 x 2) surface, prepared by ion bombardment and annealing, has been studied by scanning tunneling microscopy. In the occupied states (sample bias V-S = -1.5 V) image three protrusions arranged in a triangular shape are seen in the (4 x 2) surface unit cell. Three kinds of combination of the triangle, alpha, beta and gamma, are found in the [110] direction. Conversely, one protrusion in the unoccupied states (V-S = + 1.5 V) image is seen in the unit cell. A structure model of the (4 x 2) surface is proposed.
引用
收藏
页码：L451 / L455
页数：5
相关论文
共 50 条
  • [1] A clean GaP(001)4x2/c(8x2) surface structure studied by scanning tunneling microscopy and ion scattering spectroscopy
    Naitoh, M
    Watanabe, A
    Konishi, A
    Nishigaki, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9A): : 4789 - 4790
  • [2] Theoretical scanning tunneling microscopy images of the Ga-rich GaAs(001)-(4x2) surface
    Ohno, T
    SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY, 1997, 44 (02): : 145 - 148
  • [3] Scanning tunneling microscopy study of the evolution of the GaAs(001) surface during the (2X4)-(4X2) phase transition
    Chizhov, I
    Lee, G
    Willis, RF
    Lubyshev, D
    Miller, DL
    APPLIED SURFACE SCIENCE, 1998, 123 : 192 - 198
  • [4] GaAs(001)-''2x3'' surface studied by scanning tunneling microscopy
    Chizhov, I
    Lee, GS
    Willis, RF
    Lubyshev, D
    Miller, DL
    PHYSICAL REVIEW B, 1997, 56 (03): : 1013 - 1016
  • [5] GaAs(001)-2x3 surface studied by scanning tunneling microscopy
    Phys Rev B, 3 (1013):
  • [6] Low temperature InSb(001) surface structure studied by scanning tunneling microscopy
    Goryl, G.
    Boelling, O.
    Godlewski, S.
    Kolodziej, J. J.
    Such, B.
    Szymonski, M.
    SURFACE SCIENCE, 2007, 601 (17) : 3605 - 3610
  • [7] SURFACE STEP AND DEFECT STRUCTURE OF CR(001) STUDIED BY SCANNING TUNNELING MICROSCOPY
    WIESENDANGER, R
    GUNTHERODT, HJ
    SURFACE SCIENCE, 1990, 235 (01) : 1 - 4
  • [8] CLEAN GAP(001)-(4X2) AND H2S-TREATED (1X2)S SURFACE-STRUCTURES STUDIED BY SCANNING-TUNNELING-MICROSCOPY
    SANADA, N
    SHIMONMURA, M
    FUKUDA, Y
    SATO, T
    APPLIED PHYSICS LETTERS, 1995, 67 (10) : 1432 - 1434
  • [9] Structure and morphology of In on Ge(001) studied by scanning tunneling microscopy
    Falkenberg, G
    Seehofer, L
    Johnson, RL
    SURFACE SCIENCE, 1997, 371 (01) : 86 - 94
  • [10] Structure and morphology of In on Ge(001) studied by scanning tunneling microscopy
    Universitaet Hamburg, Hamburg, Germany
    Surf Sci, 1 (86-94):
12345