Study on the electrical properties of gd-doped ceria solid electrolyte at low temperature

被引：0

作者：

Yanqin, Zhao ^{[1
]}

Ling, Wang ^{[1
]}

Huizhu, Zhou ^{[1
]}

Yinfin, Wu ^{[1
]}

Hantnin, Wang ^{[1
]}

Haiyan, Zhao ^{[1
]}

机构：

[1] Hebei Polytech Univ, Tangshan 063009, Peoples R China

来源：

RARE METAL MATERIALS AND ENGINEERING | 2007年 / 36卷

关键词：

gd-doped ceria; ac impedance spectrum; conductivity; diffusion on interface;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrolyte, Ce0.8Gd0.2O1.9 (CGO), was successfully prepared by a solid state reaction. Conductivity and interface behaviors on CGO/Pt and CGO/Ag were studied, respectively, by using ac impedance spectroscopy in the temperature range of 250 degrees C similar to 600 degrees C. And the relation of conductivity and temperature, interfacial resistance and temperature, frequency were studied The diffusion mechanism of O-2 on the electrode surface was also studied. It has been found that relationship of bulk conductivity, grain boundary conductivity and total conductivity with temperature all follow Arrhenius equation when electrode was Pt or Ag, the activation energy of conductance of CGO(Pt) was 0.41, 0.51, 0.42eV, respectively, and that That of CGO (Ag) was 0.43, 0.55, 0.42eV. The characteristic frequency of grain boundary impedance semicircle with temperature also follows Arrhenius laws. The interface impedance of Pt (Ag)/CGO mainly come from diffusion impedance of oxygen. The oxygen diffusion activation energies of Pt/CGO and Ag/CGO are 0.32eV and 0.52eV, respectively.

引用

页码：213 / 216

页数：4