Domain boundaries in the GaAs(001)-2x4 surface

被引：17
|
作者：
Takahasi, M [1 ]
Yoneda, Y
Yamamoto, N
Mizuki, J
机构：
[1] Japan Atom Energy Res Inst, Synchrotron Radiat Res Ctr, Mikazuki, Hyogo 6795148, Japan
[2] Himeji Inst Technol, Fac Sci, Kamigori, Hyogo 6781297, Japan
来源：
PHYSICAL REVIEW B | 2003年 / 68卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.68.085321
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The alpha, beta, and gamma phases of the GaAs(001)-2x4 surface have been investigated by in situ surface x-ray diffraction in an As flux and at temperatures ranging from 480 degreesC to 610 degreesC. It has been found that the fractional-order peaks originating from the fourfold symmetry show shift in the [110] direction as well as significant broadening of the peaks in the alpha and gamma phases. The direction of the peak shift is characteristic in each phase. This behavior is explained by the formation of the antiphase domain boundaries. The atomic structure of the domain boundaries is discussed.
引用
收藏
页数：5
相关论文
共 50 条
  • [1] The Homoepitaxy GaAs on (001)-β(2x4) Surface
    Dmitriev, Dmitn'y V.
    Galitsyn, Yuriy G.
    Moshenko, Sergey P.
    Toropov, Alexander I.
    EDM 2008: INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, PROCEEDINGS, 2008, : 12 - 13
  • [2] Surface states at the GaAs(001)2x4 surface
    Arciprete, F
    Goletti, C
    Placidi, E
    Hogan, C
    Chiaradia, P
    Fanfoni, M
    Patella, F
    Balzarotti, A
    PHYSICAL REVIEW B, 2004, 69 (08):
  • [3] Reconstruction phase transition α(2x4)⟨-⟩β(2x4) on (001) GaAs surface
    Dmitriev, DV
    Galitsyn, YG
    Mansurov, VG
    Toropov, AI
    EDM 2005: INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, PROCEEDINGS, 2005, : 32 - 33
  • [4] Adsorption of Zn on the GaAs(001)-(2x4) surface
    Ohtake, A
    Hanada, T
    Yasuda, T
    Yao, T
    APPLIED PHYSICS LETTERS, 1999, 74 (20) : 2975 - 2977
  • [5] The GaAs(001)-(2x4) surface: Structure, chemistry, and adsorbates
    Goringe, CM
    Clark, LJ
    Lee, MH
    Payne, MC
    Stich, I
    White, JA
    Gillan, MJ
    Sutton, AP
    JOURNAL OF PHYSICAL CHEMISTRY B, 1997, 101 (09): : 1498 - 1509
  • [6] The stability of a GaAs(001)-(2x4) surface with Si adatoms
    Komoku, K
    Shiraishi, K
    Ito, T
    Teramoto, I
    APPLIED SURFACE SCIENCE, 1997, 121 : 175 - 178
  • [7] RHEED EVIDENCE FOR A DOMAIN-STRUCTURE OF GAAS(001)-2X4 AND GAAS(001)-4X2 RECONSTRUCTED SURFACES
    DOBSON, PJ
    NEAVE, JH
    JOYCE, BA
    SURFACE SCIENCE, 1982, 119 (01) : L339 - L345
  • [8] Surface phase diagram of (2X4) and (4X2) reconstructions of GaAs(001)
    Schmidt, WG
    Mirbt, S
    Bechstedt, F
    PHYSICAL REVIEW B, 2000, 62 (12): : 8087 - 8091
  • [9] Etching reaction of methylchloride molecule on the GaAs (001)-2x4 surface
    Ozeki, M.
    Iwasa, Y.
    Shimizu, Y.
    APPLIED SURFACE SCIENCE, 2007, 253 (13) : 5914 - 5919
  • [10] THE EFFECT OF RECONSTRUCTION ON RHEED INTENSITIES FOR THE GAAS(001)2X4 SURFACE
    KNIBB, MG
    MAKSYM, PA
    SURFACE SCIENCE, 1988, 195 (03) : 475 - 498
12345