Fast inverter loss simulation and silicon carbide device evaluation for hybrid electric vehicle drives

被引：0
|
作者：
Bryant, A. T. [1 ]
Roberts, G. J. [1 ]
Walker, A. [1 ]
Mawby, P. A. [1 ]
机构：
[1] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England
来源：
2007 POWER CONVERSION CONFERENCE - NAGOYA, VOLS 1-3 | 2007年
关键词：
silicon carbide; compact modeling; power semiconductor devices; hybrid vehicle; driving cycle;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an integrated framework for modelling inverter performance and evaluating power devices in hybrid electric vehicle drives. Based in MATLAB/Simulink, it uses a novel method of decoupling the device and inverter simulation to maintain high accuracy of power losses and devices temperatures, and achieve faster than real time inverter simulation. An illustration is given for a full hybrid vehicle for different driving cycles. Device models are included for silicon carbide Schottky diodes as well as silicon IGBTs and PIN diodes, allowing evaluation of the new material devices. The simulation framework offers the potential to rapidly improve the inverter and powertrain design process, and to evaluate device selection quickly.
引用
收藏
页码：988 / +
页数：3
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