EBIC and CL study of defects in strain balanced InGaAs/InGaAs multi quantum wells

被引：0
|
作者：
Mazzer, M [1 ]
Tundo, S [1 ]
Rohr, C [1 ]
Ekins-Daukes, N [1 ]
Barnham, K [1 ]
Nasi, L [1 ]
Lazzarini, L [1 ]
Salviati, G [1 ]
Clarke, G [1 ]
机构：
[1] IME Ist, CNR, I-73100 Lecce, Italy
来源：
PROCEEDINGS OF THE 5TH MULTINATIONAL CONGRESS ON ELECTRON MICROSCOPY | 2001年
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TH742 [显微镜];
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页码：353 / 354
页数：2
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